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| MPSH10 / MMBTH10 Discrete POWER & Signal Technologies MPSH10 MMBTH10 C E C E TO-92 B SOT-23 Mark: 3E B NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 A to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 25 30 3.0 50 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MPSH10 350 2.8 125 357 Max *MMBTH10 225 1.8 556 Units mW mW/C C/W C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." (c)1997 Fairchild Semiconductor Corporation MPSH10 / MMBTH10 NPN RF Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Sustaining Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current I C = 1.0 mA, IB = 0 I C = 100 A, I E = 0 I E = 10 A, I C = 0 VCB = 25 V, IE = 0 VEB = 2.0 V, IC = 0 25 30 3.0 100 100 V V V nA nA ON CHARACTERISTICS hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage I C = 4.0 mA, VCE = 10 V I C = 4.0 mA, IB = 0.4 mA I C = 4.0 mA, VCE = 10 V 60 0.5 0.95 V V SMALL SIGNAL CHARACTERISTICS fT Ccb Crb rb'Cc Current Gain - Bandwidth Product Collector-Base Capacitance Collector Base Time Constant I C = 4.0 mA, VCE = 10 V, f = 100 MHz VCB = 10 V, IE = 0, f = 1.0 MHz I C = 4.0 mA, VCB = 10 V, f = 31.8 MHz 650 0.7 0.35 0.65 9.0 MHz pF pF pS Common-Base Feedback Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Spice Model NPN (Is=69.28E-18 Xti=3 Eg=1.11 Vaf=100 Bf=308.6 Ne=1.197 Ise=69.28E-18 Ikf=22.83m Xtb=1.5 Br=1.11 Nc=2 Isc=0 Ikr=0 Rc=4 Cjc=1.042p Mjc=.2468 Vjc=.75 Fc=.5 Cje=1.52p Mje=.3223 Vje=.75 Tr=1.558n Tf=135.8p Itf=.27 Vtf=10 Xtf=30 Rb=10) MPSH10 / MMBTH10 NPN RF Transistor (continued) Typical Characteristics VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 100 80 125 C Vce = 5V Collector-Emitter Saturation Voltage vs Collector Current 0.2 = 10 0.15 125 C 60 40 20 0 0.1 25 C 0.1 25 C - 40 C 0.05 - 40 C 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRENT (mA) P 42 50 0.1 1 10 I C - COLLECTOR CURRENT (mA) 20 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.1 VBE(ON) BASE-EMITTER ON VOLTAGE (V) - VBESAT- BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current = 10 - 40 C 25 C 125 C Base-Emitter ON Voltage vs Collector Current 1 V 0.8 CE = 5V - 40 C 25 C 0.6 125 C 0.4 IC 1 10 - COLLECTOR CURRENT (mA) P 42 20 0.2 0.01 0.1 1 10 I C - COLLECTOR CURRENT (mA) P 42 100 Collector-Cutoff Current vs Ambient Temperature ICBO- COLLECTOR CURRENT (nA) PD - POWER DISSIPATION (mW) Power Dissipation vs Ambient Temperature 350 300 250 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 10 VCB = 30V SOT-23 TO-92 1 0.1 25 50 75 100 125 T A - AMBIENT TEMPERATURE ( C) 150 MPSH10 / MMBTH10 NPN RF Transistor (continued) Common Base Y Parameters vs. Frequency Input Admittance Y ib - INPUT ADMITTANCE (mmhos) 120 80 40 0 -40 -80 VCE = 10V I C = 5 mA Output Admittance Yob - OUTPUT ADMITTANCE (mmhos) 12 10 8 6 VCE = 10V I C = 5 mA g ib b ob 4 2 0 100 b ib g ob 200 500 f - FREQUENCY (MHz) P 42 (BASE) -120 100 200 500 f - FREQUENCY (MHz) P 42 (BASE) 1000 1000 Y fb - FORWARD ADMITTANCE (mmhos) 120 Yrb - REVERSE ADMITTANCE (mmhos) Forward Transfer Admittance b fb 80 40 0 Reverse Transfer Admittance 8 VCE = 10V 6 I C = 5 mA 4 g -40 -80 -120 100 fb -b rb 2 VCE = 10V I C = 5 mA -g rb 0 100 200 500 f - FREQUENCY (MHz) ( S) 200 500 f - FREQUENCY (MHz) 1000 1000 MPSH10 / MMBTH10 NPN RF Transistor (continued) Common Emitter Y Parameters vs. Frequency Input Admittance Yoe - OUTPUT ADMITTANCE (mmhos) Y ie - INPUT ADMITTANCE (mmhos) 24 20 16 12 VCE = 10V I C = 2 mA 6 5 4 Output Admittance VCE = 10V I C = 2 mA g ie b oe 3 2 1 b ie 8 4 0 100 g oe 0 100 200 500 f - FREQUENCY (MHz) P 42 (EMITTER) 200 500 f - FREQUENCY (MHz) 1000 1000 Y fe - FORWARD ADMITTANCE (mmhos) Yre - REVERSE ADMITTANCE (mmhos) Forward Transfer Admittance 60 VCE = 10V 40 20 0 -20 -40 -60 100 I C = 2 mA Reverse Transfer Admittance 1.2 1 0.8 VCE = 10V I C = 2 mA g fe -b re 0.6 0.4 0.2 0 100 b fe 200 500 f - FREQUENCY (MHz) P 42 (EMITTER) -g re 200 500 f - FREQUENCY (MHz) 1000 1000 MPSH10 / MMBTH10 NPN RF Transistor (continued) Test Circuits 2.0 K 10 K VCC = 12 V 1000 pF 1000 pF 0.8-10 pF 100 pF L2 2.0 pF T1 TUM 1000 pF Input 50 L1 5.0-18 pF 1000 pF 0.8-10 pF 1000 pF 680 L1 - L3 turns No. 16 wire, 1/2 inch L x 1/4 inch ID tapped 1 1/2 turns from cold side L2 - L6 turns No. 14 wire, 1 inch L x 1/4 inch ID tapped 1 1/2 turns from cold side T1 - Pri. 1 turn No. 16 wire Sec. 1 turn No. 18 wire FIGURE 1: Neutralized 200 MHz pF and NF Circuit 50 pF (NOTE 2) 175 pF 500 mHz Output into 50 RFC (NOTE 1) NOTE 1: 2 turns No. 16 AWG wire, 3/8 inch OD, 1 1/4 inch long NOTE 2: 9 turns No. 22 AWG wire, 3/16 inch OD, 1/2 inch long 1000 pF 1000 pF 2.2 K RFC - VCC VCC FIGURE 2: 500 MHz Oscillator Circuit |
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